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Home ? News ? News & Events ? Japan invested 25.8 billion yuan in DRAM giants to improve chip productivity

Japan invested 25.8 billion yuan in DRAM giants to improve chip productivity

2025-10-15 10:02:26

On September 12th, Japan's Ministry of Economy, Trade and Industry announced its decision to provide Meguiar's DRAM memory manufacturing base in East Hiroshima, Hiroshima Prefecture with a financial subsidy of up to 536 billion yen (about 25.869 billion yuan).
 
According to the plan, Meguiar's technology is expected to introduce EUV mask aligner into Hiroshima's factory in 2025, and at the same time start the preparatory work for the mass production of its advanced 1-gamma(1γ) process DRAM chip. The Japanese government once again provides large-scale financial support, aiming at strengthening Micron's local implementation of advanced DRAM chip manufacturing projects, thus improving Japan's independent productivity in the domestic memory chip field.
 
Of this subsidy, about 500 billion yen will be mainly used for the construction and production implementation of the new standard factory building of DRAM, and another 36 billion yen will specially support Micron's research and development work in the field of high-performance memory. As a matching investment, Micron Technology is expected to invest about 1.5 trillion yen in the factory, and the construction project is expected to start in early 2026, with the goal of realizing the announced mass production of the next generation of 1γ process DRAM chips based on EUV lithography technology in 2027.
 
It is understood that while continuing the traditional DRAM technology, the factory will further expand the capacity layout of high-bandwidth memory (HBM) to meet the growing market demand in the fields of artificial intelligence and big data processing. At present, Fab15 factory in Hiroshima undertakes the previous wafer manufacturing task, and the new factory project will further promote the DRAM process product upgrade and overall capacity expansion by introducing multiple EUV lithography equipment and high-standard clean rooms.


Keywords: DRAM
 
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